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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
FDH50N50_F133 / FDA50N50
500V N-Channel MOSFET Features
* 48A, 500V, RDS(on) = 0.105 @VGS = 10 V * Low gate charge ( typical 105 nC) * Low Crss ( typical 45 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
October 2008
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GD S
TO-247
FDH Series
TO-3P
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDH50N50_F133/FDA50N50
500 48 30.8 192 20 1868 48 62.5 4.5 625 5 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min.
-0.24 --
Max.
0.2 -40
Unit
C/W C/W C/W
(c)2008 Fairchild Semiconductor Corporation
1
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FDH50N50_F133 / FDA50N50 Rev. A
FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDH50N50_F133 FDA50N50
Device
FDH50N50_F133 FDA50N50
Package
TO-247 TO-3P
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
30 30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 24A VDS = 40V, ID = 48A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
500 -----3.0 ----------(Note 4, 5)
Typ.
-0.5 -----0.089 20 4979 760 50 161 342 105 360 225 230 105 33 45
Max Units
--25 250 100 -100 5.0 0.105 -6460 1000 65 --220 730 460 470 137 --V V/C A A nA nA V S pF pF pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
VDS = 400V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 250V, ID = 48A RG = 25
Switching Characteristics
-----
VDS = 400V, ID = 48A VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 48A VGS = 0V, IS = 48A dIF/dt =100A/s
(Note 4)
------
---580 10
48 192 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.46mH, IAS = 48A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 48A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDH50N50_F133 / FDA50N50 Rev. A
2
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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
2
Figure 2. Transfer Characteristics
100
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
ID , Drain Current [A]
10
1
10
150 C 25 C -55 C
Notes : 1. VDS = 40V 2. 250s Pulse Test
o o
o
10
0
1
Notes : 1. 250s Pulse Test o 2. TC = 25 C
10
-1
10
-1
10
0
10
1
0.1
4
5
6
7
8
9
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
160
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
0.3
120
RDS(ON) [],
VGS = 10V
0.2
80
0.1
VGS = 20V
150 C 40 25 C
Notes : 1. VGS = 0V 2. 250s Pulse Test
o
o
Note : TJ = 25 C
o
0.0
0
25
50
75
100
125
150
175
0 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
12,000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VDS = 100V
VGS, Gate-Source Voltage [V]
10,000
10
VDS = 250V VDS = 400V
Capacitance [pF]
8,000
8
6,000
Ciss Coss
6
4,000
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2,000
2
Note : ID = 48A
Crss
0 -1 10 10
0
10
1
10
2
0
0
20
40
60
80
100
120
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDH50N50_F133 / FDA50N50 Rev. A
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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.0
RDS(ON), (Normalized)
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 24 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
10
3
Figure 10. Maximum Drain Current vs. Case Temperature
50
Operation in This Area is Limited by R DS(on)
40
ID, Drain Current [A]
1 ms
10
1
ID, Drain Current [A]
3
10
2
10 us 100 us 10 ms
30
DC
20
10
0
Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
10
-1
10
0
10
1
10
2
10
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Typical Drain Current Slope vs. Gate Resistance
4,000 3,500 3,000 2,500
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C
o
Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance
45 40 35 30
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C
o
di/dt [A/S]
dv/dt [V/nS]
di/dt(on)
2,000 1,500 1,000 500 0
25 20 15 10 5 0
dv/dt(on)
dv/dt(off)
di/dt(off)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
50
RG, Gate resistance []
RG, Gate resistance []
FDH50N50_F133 / FDA50N50 Rev. A
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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Typical Switching Losses vs. Gate Resistance
1,000
Figure 14. Unclamped Inductive Switching Capability
100
Notes : 1. If R = 0 tAV = (L)(IAS)/(1.3 Rated BVDSS - VDD) 2. If R 0 tAV = (L/R)In[(IAS x R)/(1.3 Rated BVDSS - VDD)+1]
800
600
IAS, Avalanche Current [A]
Eoff
Energy [J]
Eon
400
Notes : 1. VDS = 400 V 2. VGS = 12 V 3. ID = 25A 4. TJ = 125 C
o
10
Starting TJ = 150 C
o
Starting TJ = 25 C
o
200
0
0
5
10
15
20
25
30
35
40
45
50
1 0.01
0.1
1
10
100
RG, Gate resistance []
tAV, Time In Avalanche [ms]
Figure 15. Transient Thermal Resistance Curve
10
-1
D=0.5 0.2 0.1 0.05
Notes : o 1. Z JC(t) = 0.2 C/W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Z JC(t)
ZJC(t), Thermal Response
10
-2
0.02 0.01 single pulse
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square W ave Pulse Duration [sec]
FDH50N50_F133 / FDA50N50 Rev. A
5
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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-247AB
Dimensions in Millimeters
FDH50N50_F133 / FDA50N50 Rev. A
6
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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
Mechanical Dimensions (Continued)
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
FDH50N50_F133 / FDA50N50 Rev. A
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FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET
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Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I37
8 FDH50N50_F133 / FDA50N50 Rev. A
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